Skip to main content
×
×
Home

Dual-Gate SiO2/P3HT/SiNx OTFT

  • Flora Li (a1), Sarswati Koul (a1), Yuri Vygranenko (a1), Peyman Servati (a1) and Arokia Nathan (a1)...
Abstract
Abstract

This paper reports on a new organic thin-film transistor (OTFT) based on a dual-gate configuration. This dual-gate OTFT is useful in circuit applications from the standpoint of providing control over selected device parameters for enhanced circuit reliability. Moreover, the dual-gate structure can shield parasitic effects in vertically integrated electronics, making it particularly promising for active matrix display and imaging applications. The dual-gate OTFT also lends itself as a highly functional test structure for characterization of interface integrity of the active organic and dielectric layers. In this work, the dual-gate OTFT is fabricated using regioregular poly(3-hexylthiophene) (P3HT) as the organic semiconductor layer. The bottom-gate employs silicon dioxide (SiO2) as the gate dielectric, whereas the top-gate employs a low-temperature amorphous silicon nitride (SiNx) as the passivation dielectric. The voltage on the bottom-gate has a distinct influence on the threshold voltage, subthreshold slope, on-current, and leakage current of the top-gate TFT. Similar dependence of the bottom-gate TFT characteristics on the top-gate voltage is observed. This design provides a means of characterizing the density of states of the bottom P3HT/SiO2 and top P3HT/SiNx interfaces, and conveys insight into the underlying transport mechanisms. The ability to control selected TFT parameters (e.g., threshold voltage) using the dual-gate OTFT structure is attractive for circuit integration applications in active matrix displays and imagers.

Copyright
References
Hide All
1Dimitrakopoulos C.D. and Malenfant P.R.L., Adv. Mater. 14, 99 (2002).
2Dimitrakopoulos C.D. and Mascaro D.J., IBM J. Res. & Dev. 45, 11 (2001).
3Horowitz G., Adv. Mater. 10, 365 (1998).
4Schon J.H., Berg S., Kloc Ch., Batlogg B., Science 287, 1022 (2000).
5Reese C., Roberts M., Ling M.M., and Bao Z., Materials Today 7, 20, (2004).
6Tsukada T., “Active-matrix liquid-crystal displays,” in Technology and Applications of Hydrogenated Amorphous Silicon, Street R.A., Ed. New York, Springer, pp. 793 (2000).
7Nathan A., Kumar A., Sakariya K., Servati P., Karim K.S., Striakhilev D., and Sazonov A., IEEE J. Sel. Top. Quantum Electron. 10, 58 (2004).
8Street R.A., “Large area image sensor arrays,” in Technology and Applications of Hydrogenated Amorphous Silicon, Street R.A., Ed., New York, Springer, pp. 147221 (2000).
9Gelinck G.H., Edzer H., Huitema A., Veenendaal E.V., Cantatore E., Schrijnemakers L., Putten J.B.P.H. van der, Geuns T.C.T., Beenhakkers M., Giesbers J.B., Huisman B.H., Meijer E.J., Benito E.M., Touwslager F.J., Marsman A.W., Rens B.J.E. vans, and Leeuw D.M. de, Nat. Mat. 3, 106 (2004).
10Sirringhaus H. and Friend R., Science 280, 1741 (1998).
11Dodabalapur A., Bao Z., Makhija A., Laquindanum J.G., Raju V.R., Feng Y., Katz H.E., and Rogers J., Appl. Phys. Lett. 73, 142 (1998).
12Li Z.L., Yang S.C., Meng H.F., Chen Y.S., Yang Y.Z., Liu C.H., Horng S. F., Hsu C.S., Chen L.C., Hu J.P., and Lee R.H., Appl. Phys. Lett. 84, 3558 (2004).
13Servati P., Prakash S., Nathan A., and Py C., J. Vac. Sci. Technol. A, Vac. Surf. Films 20, 1374 (2002).
14Servati P., Karim K.S., and Nathan A., IEEE Trans. Electron Devices 50, 926 (2003).
15Salleo A., Chabinyc M.L., Yang M.S., and Street R.A., Appl. Phys. Lett. 81, 4383 (2002).
16Kobayashi S., Nishikawa T., Takenobu T., Mori S., Shimoda T., Mitani T., Shimotani H., Yoshimoto N., Ogawa S., and Iwasa Y., Nat. Mat. 3, 317 (2004).
17Kosbar L.L., Dimitrakopoulos C.D. and Mascaro D.J., Mater. Res. Soc. Proc. 665, C10.6 (2001).
18McArthur C., Meitine M., and Sazonov A. in Flexible Electronics – Materials and Device Technology, edited by Fruehauf N., Chalamala B.R., Gnade B.E., and Jang J., (Mater. Res. Soc. Proc. 769, Pittsburgh, PA, 2003) pp.303308.
19Wang G., Swensen J., Moses D., and Heeger A.J., J. Appl. Phys. 93, 6137 (2003).
20Han J.I., Kim Y.H., Park S.K., Moon D.G., and Kim W.K., Mater. Res. Soc. Proc. 814, 14.3 (2004).
21Abdou M.S.A., Orfino F.P., Son Y., and Holdcroft S., J. Am. Chem. Soc. 119, 4518 (1997).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 2 *
Loading metrics...

Abstract views

Total abstract views: 61 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 22nd January 2018. This data will be updated every 24 hours.