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The Dynamical Transition to Step-Flow Growth During Homoepitaxy of GaAs (001)

Published online by Cambridge University Press:  15 February 2011

B. G. Orr ,
J. Sudijono  and
M. D. Johnson
B. G. Orr
Affiliation:
The Harrison M. Randall Laboratory of Physics University of Michigan, Ann Arbor, MI 48109-1120
J. Sudijono
Affiliation:
The Harrison M. Randall Laboratory of Physics University of Michigan, Ann Arbor, MI 48109-1120
M. D. Johnson
Affiliation:
The Harrison M. Randall Laboratory of Physics University of Michigan, Ann Arbor, MI 48109-1120
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Abstract

The evolution of surface morphology of molecular-beam-epitaxy-grown GaAs (001) has been studied by scanning tunneling microscope. Images show that in the early stages of deposition the morphology oscillates between one -with twodimensional nucleation and coalescing islands, i.e. flat terraces. After the initial oscillatory regime, the system evolves to a dynamical steady state. This state is characterized by a constant step density. As such, the growth mode can be called a generalized step flow. Comparison with RHEED shows that there is a direct correspondence between the surface step density and the RHEED specular intensity. An increase in step density results in a decrease in specular intensity. Additionally, further deposition beyond 120 monolayers (up to 1450 monolayers) display a slowly increasing surface roughness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 15
Copyright
Copyright © Materials Research Society 1993

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