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Dynamics of InAs Quantum Dots Formation on AlAs and GaAs

Published online by Cambridge University Press:  17 March 2011

M. Yakimov ,
V. Tokranov  and
S. Oktyabrsky
M. Yakimov
Affiliation:
UAlbany Institute for Materials, University at Albany - SUNY, CESTM, 251 Fuller Rd., Albany, NY 12203, U.S.A.
V. Tokranov
Affiliation:
UAlbany Institute for Materials, University at Albany - SUNY, CESTM, 251 Fuller Rd., Albany, NY 12203, U.S.A.
S. Oktyabrsky
Affiliation:
UAlbany Institute for Materials, University at Albany - SUNY, CESTM, 251 Fuller Rd., Albany, NY 12203, U.S.A.
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Abstract

We have studied the formation of InAs quantum dots (QDs) grown by molecular beam epitaxy on top of GaAs and 2 ML-thick AlAs layers in the temperature range from 350 to 500°C. In-situ reflection high energy electron diffraction (RHEED) patterns were recorded in real time during the growth and analyzed to characterize the 2D-to-3D transition on the surface, including QD formation, and ripening process. The kinetics of QD formation was studied using the InAs growth rates ranging from 0.01 to 1 ML/s and different ratios of As2/In fluxes. RHEED patterns and ex-situ atomic force microscopy images were analyzed to reveal the development of sizes and shapes of the single-layer and stacked QD ensembles. The critical InAs coverage for QD formation was shown to be consistently higher for dots grown on the AlAs overlayer than for those grown on GaAs surface. Self-assembly of multilayer QD stacks revealed the reduction of the critical thickness for dots formed in the upper layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P2.6
Copyright
Copyright © Materials Research Society 2001

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