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Dynamics of Metal-SiOx and SiOx–Si Interfaces and the Associated Instabilities In Practical Metal/Insulator/Semiconductor Structures

Published online by Cambridge University Press:  15 February 2011

G. Rajeswaran ,
W. A. Anderson ,
M. Jackson  and
M. Thayer
G. Rajeswaran*
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, 4232 Ridge Lea Road, Amherst, NY 14226, (U.S.A.)
W. A. Anderson
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, 4232 Ridge Lea Road, Amherst, NY 14226, (U.S.A.)
M. Jackson
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, 4232 Ridge Lea Road, Amherst, NY 14226, (U.S.A.)
M. Thayer
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, 4232 Ridge Lea Road, Amherst, NY 14226, (U.S.A.)
*
† Present address: Brookhaven National Laboratory, Upton, NY 11973, U.S.A.
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Abstract

X-ray photoelectron spectroscopy, Auger electron spectroscopy and ellipsometry measurements were performed at Cr-SiOx, and Yb-SiOx interfaces, which are being considered for metal/insulator/semiconductor (MIS) solar cell applications. These measurements have led to a knowledge of instability mechanisms associated with MIS solar cells. The dynamics of the metal-oxide interface reduce the effective thickness of the insulating SiOx layer. Typically, in a 3 week period after fabrication the oxide thickness decreases by about 2 Å for ytterbium MIS structures and by less than 1 Å for chromium MIS structures. A structural equilibrium is reached thereafter. To explore further the dependence of MIS Schottky barrier heights on oxide thickness variations (from about 5 to 20 Å) a comprehensive charge balance analysis was performed at a general MIS interface. This theoretical study supports experimental data on barrier heights and also on instabilities. In addition, the application of the theoretical model to the experimental barrier heights has yielded quantitative information regarding the density of interface states at the SiOx,–Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 351
Copyright
Copyright © Materials Research Society 1982

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References

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