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Early Stages of Oxygen Clustering and Its Influence on Electrical Behavior of Silicon

Published online by Cambridge University Press:  15 February 2011

Gottlieb S. Oehrlein  and
James W. Corbett
Gottlieb S. Oehrlein
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y., USA
James W. Corbett
Affiliation:
Institute for the Study of Defects in Solids, Physics Department, State University of New York at Albany, Albany, N.Y., USA
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Abstract

Our knowledge of phenomena connected to the early stages of oxygen clusters, especially their electrical activity is reviewed. In addition to the well-known 450°C thermal donors, 'new oxygen donors', which occur in ca. 650°C annealing, have emerged in conjunction with low temperature processing for VLSI and are discussed. The existing models of thermal donors are reviewed. In a new model of thermal donor formation, thermal donors are viewed as metastable oxygen clusters which lower the compressive strain of the surrounding silicon matrix via bonding of 2p oxygen lone pair orbitals. It is shown how this bonding can result in shallow double donor states.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 107
Copyright
Copyright © Materials Research Society 1982

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References

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