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The effect of BCl3 pretreatment on the etching of AlN in Cl2-based plasma

Published online by Cambridge University Press:  01 February 2011

Xiaoyan Xu ,
Vladimir Kuryatkov ,
Boris Borisov ,
Mahesh Pandikunta ,
Sergey A Nikishin  and
Mark Holtz
Xiaoyan Xu
Affiliation:
XIAOYAN.XU@TTU.EDUXIAOYAN.XU@TTU.EDU, TEXAS TECH UNIVERSITY, NANO TECH CENTER, Lubbock, Texas, United States
Vladimir Kuryatkov
Affiliation:
VLADIMIR.KURYATKOV@ttu.edu, TEXAS TECH UNIVERSITY, NANO TECH CENTER, Lubbock, Texas, United States
Boris Borisov
Affiliation:
b.borisov@ttu.edu, TEXAS TECH UNIVERSITY, NANO TECH CENTER, Lubbock, Texas, United States
Mahesh Pandikunta
Affiliation:
mahesh.pandikunta@ttu.edu, TEXAS TECH UNIVERSITY, NANO TECH CENTER, Lubbock, Texas, United States
Sergey A Nikishin
Affiliation:
sergey.a.nikishin@ttu.edu, TEXAS TECH UNIVERSITY, NANO TECH CENTER, Lubbock, Texas, United States
Mark Holtz
Affiliation:
MARK.HOLTZ@ttu.edu, TEXAS TECH UNIVERSITY, NANO TECH CENTER, Lubbock, Texas, United States
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Abstract

The effect of BCl3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AlN is investigated using inductively coupled plasma reactive ion etching. The native AlN oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both AlN and its native oxide. Following removal of the native oxide, Cl2/Ar/BCl3 plasma etching with 15% BCl3 fraction results in a high etch rate ˜ 87 nm/min and modest increases in the surface roughness.

Keywords

III-Vreactive ion etchingmolecular beam epitaxy (MBE)

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A09-34
Copyright
Copyright © Materials Research Society 2009

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References

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