Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-24T01:12:11.953Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Chemical Solutions and Surface Wettability on the Stability of Advanced Porous Low-k Materials

Published online by Cambridge University Press:  02 August 2011

Q. T. Le ,
G. Vereecke ,
A. Bertha ,
E. Kesters ,
M. Lux  and
H. Struyf
Q. T. Le
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium.
G. Vereecke
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium.
A. Bertha
Affiliation:
University of Antwerp, Belgium.
E. Kesters
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium.
M. Lux
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium.
H. Struyf
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium.
Get access

Abstract

This study focuses on the impact of chemical solutions (hydrogen fluoride and tetramethylammonium hydroxide) on the change in properties of advanced porous low-k films. It was shown that there is no preferential removal of methyl groups during the dissolution process. With regard to wetting agents, the presence of isopropyl alcohol or surfactant (polyoxyethylene ether and alkoxylated diol type) in HF solution slowed down low-k film etching. Complete removal of surfactant residual usually requires an additional rinsing step using a low-molecular weight alcohol such as isopropyl alcohol.

Keywords

dielectricdielectric propertieschemical reaction
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1335: Symposium O – Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics , 2011 , mrss11-1335-o03-02
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Born, H. H. and Prigogine, M., Chim. Phys. 76, 538 (1979).Google Scholar
2. Knotter, D. M., J. Am. Chem. Soc. 122, 4345 (2000).Google Scholar
3. Chang, T. C. et al. , J. Vac. Sci. Technol. B 20, 1561 (2002).Google Scholar
4. Worsley, M. A. et al. , J. Vac. Sci. Technol. B 23, 395 (2005).Google Scholar
5. Abe, H., Yoneda, M., and Fijiwara, N., Jpn. J. Appl. Phys. 47, 1435 (2008).Google Scholar
6. Kerr, J. A., in Handbook of Chemistry and Physics, Ed. Weast, R. C., Astle, M. J., and Beyer, W. H., CRC Press, Inc., F176–F181 (1984).Google Scholar
7. Le, Q. T. et al. , Electrochem. Solid-St. Lett. 9, F17 (2006).Google Scholar
8. Judge, J. S., J. Electrochem. Soc. 118, 1772 (1971).Google Scholar
9. Eom, D.-H. et al. , Jpn. J. Appl. Phys. 41, 5881 (2002).Google Scholar
10. Watanabe, D. et al. , Jpn. J. Appl. Phys. 47, 2425 (2008).Google Scholar