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The Effect of Growth Interruption on Structural and Optical Properties of InAsP/InP Multiple Quantum Wells

  • C. A. Tran (a1), J. T. Graham (a1), R. A. Masut (a2) and J. L. Brebner (a1)

A systematic study of the effect of growth interruption on the interface roughness of InAsxP1-x/InP heterostructures has been carried out. High resolution X-ray diffraction, photoluminescence and optical absorption measurements for InAsP/InP strained multiple quantum wells reveal that the InAsP/InP interface is very sensitive to growth interruption. For nonoptimal growth interruption procedures a large density of interface states is created, probably as a consequence of compositional modifications within the interface region. We find that photoluminescence on its own is insufficient to characterize the interface roughness in our samples, since even for narrow low-temperature peak emissions corresponding to the multiple quantum wells, the absorption spectrum may reveal a significant density of interface states.

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