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Effect of Heavy Doping on the Nucleation and Growth of Bulk Stacking Faults in Silicon

Published online by Cambridge University Press:  21 February 2011

C. W. Pearce ,
T. Kook  and
R. J. Jaccodine
C. W. Pearce
Affiliation:
AT&T Technology Systems, Allentown, PA 18103;
T. Kook
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, PA 18015.
R. J. Jaccodine
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, PA 18015.
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Abstract

The effect of heavily doping silicon3with boron (up to 9.0×19/cm3) or antimony and arsenic (up to 1.0×19/cm3) on the nucleation and growth of bulk stacking faults (BSF) was investigated by the use of three-step heat treatment; 700°C-24 hrs., 900 °C 24 hrs., and 1050 °C up to 48 hrs.

The length and density of BSF were determined by optical microscopy after a Secco or Schimmel etch of cleaved specimens. From the effect of heavy doping on the density of BSF we imply the nucleation rate is doping level dependant. The effect of the low temperature (700°C) heat treatment time on the relationship between the density and the length of BSF indicates that the growth of BSF may be a supply-limited process. The effect of a high temperature (1300°C) oxygen dispersion treatment was also investigated. The results are analyzed in terms of a vacancy model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 231
Copyright
Copyright © Materials Research Society 1985

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References

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