Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-26T16:02:54.589Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of La doping on the structural and electrical properties of SrBi2Ta2O9

Published online by Cambridge University Press:  28 July 2011

Ortega Nora ,
S. Bhattacharyya ,
P. Bhattacharya ,
R.R. Das  and
R.S. Katiyar
Ortega Nora
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00931-3343
S. Bhattacharyya
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00931-3343
P. Bhattacharya
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00931-3343
R.R. Das
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00931-3343
R.S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00931-3343
Get access

Abstract

The effect of anthanum substitution (0-20%) on phase formation, structural evolution and electrical properties of SrBi2Ta2O9 (SBT) ceramics were investigated. X-ray diffraction studies revealed that phase pure SBT bulk samples can be synthesized with lanthanum doping without any phase segregation. Raman spectroscopy was used to understand the lattice vibrational characteristics of La substituted SBT compound. The ferroelectric soft mode at 27 cm−1 was shifted towards the lower frequencies at room temperature with increase in La concentrations. The octahedral stretching mode (O-Ta-O) did not influenced by La substitution in SBT. The x-ray photoemission spectroscopy measurements showed the decrease of binding energy of Bi 4f core levels (5/2 and 7/2) upon La substitution in SBT. The dielectric constant was increased from 120 to 190 up to 10% La doping and decreased with further increase in La concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D3.24
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. de Araujo, C. A. paz, Cuchiaro, J. D., McMillan, L.D., Scott, M.C., and Scott, J. F., Nature 374, 627 (1995).Google Scholar
2. Auciello, O., Scott, J.F., and Ramesh, R., Phys. Today, 58, 22 (1998).Google Scholar
3. Subbarao, E.C., J. Phys. Chem. Solids, 23, 665 (1962).Google Scholar
4. Desu, S. B. and Vijay, D.P., Mater. Sci. Eng. B 32, 75 (1995).Google Scholar
5. Das, R. R., Bhattacharya, P., Pérez, W., and Katiyar, R.S., J. Vac. Sci & Tech. A20, 375 (2002).Google Scholar
6. Das, R. R., Bhattacharya, P., Pérez, W. and Katiyar, R.S. and Desu, S.B., Appl. Phys. Lett. 80, 637, (2002).Google Scholar
7. Chen, S. and Lee, V., J. Appl. Phys., 87, 8024, (2000).Google Scholar
8. Noguchi, T., Hase, T. and Miyasaka, Y., Jpn. J. A pppl. Phys., 35, 4900 (1996).Google Scholar
9. Das, R. R., Bhattacharya, P., Perez, W., and Katiyar, R. S. Appl. Phys. Lett. 81, 4052, (2002).Google Scholar
10. Das, R. R., Bhattacharya, P., and Katiyar, R. S., Appl. Phys. Lett. 81, 1672 (2002).Google Scholar
11. Park, B. H., Kang, B. S., Bu, S. D., Noh, T. W., Lee, L., and Joe, W., Nature (London) 401, 682 (1999).Google Scholar
12. Chon, U., Jang, H. M., Kim, M. G., and Chang, C. H., Phys. Rev. Lett. 89, 087601 (2002).Google Scholar
13. Kojima, T., Sakai, T., Watanabe, T., Funakuboa, H., Saito, K., Osada, M., Appl. Phys. Lett 80, 2746 (2002).Google Scholar
14. Takenaka, T. and Sakata, K., Ferroelectrics 38, 769 (1981).Google Scholar
15. Lee, H.N., and Hesse, D., Appl. Phys. Lett. 80, 1040 (2002).Google Scholar
16. Noguchi, Y., Miyayama, M., Oikawa, K., and Kamiyama, T., J. Appl. Phys. 95, 4261 (2004).Google Scholar
17. Pérez, W., Das, R. R., Bhattacharya, P. and Katiyar, R. S., Integ. Ferroel., 42, 365, (2002).Google Scholar
18. Das, R. R., Pérez, W. and Katiyar, R S. and Bhalla, A.S., J. Raman Spec., 33, 219 (2002).Google Scholar
19. Rae, A. D., et al. , Acta Crystall., Sect. B: Struct. Sci. 46, 474 (1990).Google Scholar
20. Cochran, W., Adv. Phys. 9, 387 (1960); 10, 401(1961).Google Scholar
21. Kojima, S., J. Phys.: Condens Matt. 10, L327 (1998).Google Scholar