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Effect of Low Level Doping of Boron and Phosphorus on the Properties of Amorphous Silicon Films
Published online by Cambridge University Press: 26 February 2011
Abstract
Effect of low level doping of boron and phosphorus on the properties of amorphous silicon films (a-Si:H) was studied. Doping level of both boron and phosphorus was in the range of 1017 atoms/cm3. Apparent improvement in the stability of dark and photoconductivity of a-Si:H films upon low level doping does not result from the elimination of light-induced defects. The stability of the dark and photoconductivity upon doping is an indication of pinning of the Fermi level.
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- Copyright © Materials Research Society 1987