Hostname: page-component-848d4c4894-ndmmz Total loading time: 0 Render date: 2024-05-16T22:17:40.298Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of N2 Plasma Treatments on Dry Etch Damage in n- and p-type GaN

Published online by Cambridge University Press:  17 March 2011

D.G. Kent ,
K.P. Lee ,
A.P. Zhang ,
B. Luo ,
M.E. Overberg ,
C.R. Abernathy ,
F. Ren ,
K.D. Mackenzie ,
S.J. Pearton  and
Y. Nakagawa
D.G. Kent
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
K.P. Lee
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
A.P. Zhang
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
B. Luo
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
M.E. Overberg
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
K.D. Mackenzie
Affiliation:
UnaxisU.S.A., Inc., St. Petersburg, FL, 33703.
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
Y. Nakagawa
Affiliation:
Nichia Chemical Industries, Tokushima-Ken, Japan
Get access

Abstract

The extent of damage recovery by N2 plasma treatment of previously damaged n- and p-GaN has been examined using current-voltage (I-V) characteristics from Schottky diodes. There are two contributions to the observed improvement in the I-V characteristics, namely a simple annealing effect and also a chemical effect from reactive nitrogen. However the N2 plasma treatment does not fully restore the initial electrical properties of the near-surface region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.16
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shul, R.J., GaN and Related Materials II, ed. Pearton, S.J. (Gordon and Breach, NY 1999).Google Scholar
2. Eddy, C.R. Jr, and Molnar, B., J. Electron. Mater. 28, 314 (1999).Google Scholar
3. Ping, A.T., Chen, Q., Yang, J.W., Khan, M.A. and Adesida, I., J. Electron. Mater. 27, 261 (1998).Google Scholar
4. Pearton, S.J., Zolper, J.C., Shul, R.J. and Ren, F., J. Appl. Phys. 86, 1 (1999).Google Scholar
5. Adesida, I., in ed. Edgar, J.H., Strite, S., Amano, H. and Akasaki, I. (Inspec, London 1999).Google Scholar
6. Cao, X.A., Zhang, A.P., Dang, G.T., Cho, H., Ren, F., Pearton, S.J., Shul, R.J., Zhang, L., Hickman, R. and Hove, J.M. Van, J.Vac. Sci. Tech. B. 17, 1540 (1999).Google Scholar
7. Fan, Z.F., Mohammed, S.N., Kim, W., Aktus, O., Botcharev, A. E. and Morkoc, H., Appl. Phys. Lett. 69, 1672 (1996).Google Scholar
8. Chen, J.Y., Pan, C.J. and Chi, G.C., Solid-State Electron., 43, 649 (1999).Google Scholar
9. Cao, X.A., Pearton, S.J., Zhang, A.P., Dang, G.T., Ren, F., Shul, R.J., Zhang, L., Hickman, R. and Hove, J.M. Van, Appl. Phys. Lett. 75, 2569 (1999).Google Scholar
10. Ping, A.J., Schmitz, A.C., Adesida, I., Khan, M.A., Chen, Q. and Yang, Y.W., J. Electron Mater. 6, 266 (1997).Google Scholar
11. Cao, X.A., Zhang, A.P., Dang, G.T., Ren, F., Pearton, S.J., Hove, J.M. Van, Hickman, R.A., Shul, R.J. and Zhang, L., J. Electron. Mater. 29, 256 (2000)Google Scholar
12. Shul, R.J., Zhang, L., Baca, A.G., Willison, C.G., Han, J, Pearton, S.J., Ren, F., Zolper, J.C. and Lester, L.F., Mat. Res. Soc. Symp. Proc. Vol. 573, 161 (1999).Google Scholar
13. Shul, R.J., Zhang, L., Baca, A.G., Willison, C.G., Han, J., Pearton, S.J. and Ren, F., J. Vac. Sci. Technol. A18, 1139 (2000).Google Scholar
14. Choi, H.W., Chua, S.J., Raman, A., Pan, J.S. and Wee, A.I.S., Appl. Phys. Lett. 77, 1795 (2000).Google Scholar
15. Lee, J.M., Chang, K.M., Kim, S.W., Huh, C., Lee, I.H. and Park, S.J., J. Appl. Phys. 87, 7667 (2000).Google Scholar
16. Kim, S.W., Lee, J.M., Huh, C., Park, N. M., Kim, H.S., Lee, I.H. and Park, S.J., Appl Phys. Lett. 76, 3079 (2000).Google Scholar