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Effect of N2 Plasma Treatments on Dry Etch Damage in n- and p-type GaN

Published online by Cambridge University Press:  17 March 2011

D.G. Kent ,
K.P. Lee ,
A.P. Zhang ,
B. Luo ,
M.E. Overberg ,
C.R. Abernathy ,
F. Ren ,
K.D. Mackenzie ,
S.J. Pearton  and
Y. Nakagawa
D.G. Kent
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
K.P. Lee
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
A.P. Zhang
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
B. Luo
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
M.E. Overberg
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
K.D. Mackenzie
Affiliation:
Unaxis U.S.A., Inc., St. Petersburg, FL, 33703.
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, U.S.A.
Y. Nakagawa
Affiliation:
Nichia Chemical Industries, Tokushima-Ken, Japan
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Abstract

The extent of damage recovery by N2 plasma treatment of previously damaged n- and p-GaN has been examined using current-voltage (I-V) characteristics from Schottky diodes. There are two contributions to the observed improvement in the I-V characteristics, namely a simple annealing effect and also a chemical effect from reactive nitrogen. However the N2 plasma treatment does not fully restore the initial electrical properties of the near-surface region.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.16
Copyright
Copyright © Materials Research Society 2001

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References

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