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Effect Of No On The Electrical Characteristics Of SiO2 Grown On P-Type 4H SiC

Published online by Cambridge University Press:  10 February 2011

H. F. Li ,
S. Dimitrijev ,
H. B. Harrison ,
D. Sweatman  and
P. Tanner
H. F. Li
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, QLD 4111, Australia
S. Dimitrijev
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, QLD 4111, Australia
H. B. Harrison
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, QLD 4111, Australia
D. Sweatman
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, QLD 4111, Australia
P. Tanner
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, QLD 4111, Australia
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Abstract

In this paper the effect of NO nitridation on the electrical characteristics of the oxides grown on p-type 4H SiC has been investigated. The results show that NO nitrided oxide has a lower interfacial trap density and a lower net oxide charge compared to N2 annealed oxides.

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References

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