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Effect of Oxygen on Radiation-Enhanced Diffusion in Silicon

  • V.E. Borisenko (a1)
Abstract

Low-energy ion bombardment has been used to enhance diffusion of phosphorus and antimony atoms in silicon. Oxygen free silicon crystals both containing phosphorus and antimony doped surface layers and original crystals were bombarded at 400–700°C with 400 eV oxygen or argon ions. Impurity and electrical carrier profiles were measured to analyse the role of oxygen in the radiationenhanced diffusion. The results obtained are explained on assuming complexes such as vacancyoxygen and vacancy-substitutional impurity to be involved in the process.

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1. Semiconductor Silicon 1981, ed. by Huff, H. R., Kriegler, R. J., and Takeishi, Y. (Electrochemical Society, Pennington, NJ 1981).
2. Defects in Semiconductors, ed. by Narayan, J., and Tan, T. Y. (North-Holland, New York 1981).
3. Minear, R. L., Nelson, D. C., and Gibbons, J. F., J. Appl. Phys. 43, 3468 (1972).
4. Ohmura, Y., Mimura, S., Kanazawa, M., Abe, T., and Konaka, M., Rad. Eff. 15, 167 (1972).
5. Maby, E. W., J. Appl. Phys. 47, 830 (1976).
6. Baruch, P. in: Radiation Effects in Semiconductors, ed. by Urli, N. B., and Corbett, J. W. (Institute of Physics, Bristol 1977) p. 126.
7. Masters, B.J., and Gorey, E. F., J. Appl. Phys. 49, 2717 (1978).
8. Morikawa, Y., Yamamoto, K., and Nagami, K., Appl. Phys. Lett. 36, 997 (1980).
9. Labunov, V. A., Borisenko, V. E., and Ukhov, V. A., Elektron.Tekh. (Sov.) ser. 6, No 11, 72 (1977).
10. Akutagawa, W., Dunlap, H. L., Hart, R., and Marsh, O. J., J. Appl. Phys. 50, 777 (1979).
11. Borisenko, V. E., Buyko, L. D., Labunov, V. A., and Ukhov, V. A., Fiz. Tekh. Poluprov. (Soy.) 15, 3 (1981).
12. Labunov, V. A., Borisenko, V. E., Fiz. Tekh. Poluprov. (Sov.) 15, 1413 (1981).
13. Carter, G., and Armous, D. G., Thin Solid Films 80, 13 (1981).
14. Hu, S. M. in: Atomic Diffusion in Semiconductors, ed by Shaw, D. (Plenum-Press, New York 1973) p. 217.
15. Corbett, J. W., Karins, J. P., and Tan, T. Y., Nucl. Instr. Methods 182/183, 457 (1981).
16. Borisenko, V. E., Gorskaya, L. F., Dutov, A. G., Labunovand, V. A., Lobanova, K. E., Fiz. Tekh. Poluprov. (Sov.) 16, 910 (1982).
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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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