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The Effect of Polysilicon Doping (Using Ion Implantation or PBr3 Diffusion or Insitu Doping) on TiSi2 Formation

Published online by Cambridge University Press:  25 February 2011

S. Chittipeddi ,
C. M. Dziuba ,
M. J. Kelly ,
V. C. Kannan ,
R. B. Irwin ,
P. M. Kahora  and
W. T. Cochran
S. Chittipeddi
Affiliation:
AT&T Bell Labs Allentown, PA 18103.
C. M. Dziuba
Affiliation:
AT&T Bell Labs Allentown, PA 18103.
M. J. Kelly
Affiliation:
AT&T Bell Labs Allentown, PA 18103.
V. C. Kannan
Affiliation:
AT&T Bell Labs Allentown, PA 18103.
R. B. Irwin
Affiliation:
AT&T Bell Labs Allentown, PA 18103.
P. M. Kahora
Affiliation:
AT&T Bell Labs Allentown, PA 18103.
W. T. Cochran
Affiliation:
AT&T Bell Labs Allentown, PA 18103.
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Abstract

In this work we have studied the effect of polysilicon doping on titanium disilicide (TiSi2) formation using extensive physical and electrical characterization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 207
Copyright
Copyright © Materials Research Society 1992

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References

REFErences

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