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Effect of Power on the Properties of SiO2 Films Produced by Plasma-Enhanced Chemical Vapour Deposition

Published online by Cambridge University Press:  22 February 2011

Y. Tao ,
D. Landheer ,
J.-M. Baribeau ,
J. E. Hulse ,
D.-X. Xu  and
M. J. Graham
Y. Tao
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
D. Landheer
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
J. E. Hulse
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
D.-X. Xu
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
M. J. Graham
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
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Abstract

The effect of power on the properties of SiO2 films produced by direct plasma-enhanced chemical vapor deposition using nitrous oxide and silane with high helium dilution has been investigated. As the power increases the p-etch rate decreases while the frequency of the Si-O-Si stretching vibration measured by Fourier transform infra-red spectroscopy increases. However the refractive index of the films measured by ellipsometry is almost constant as is the electron density measured by low-angle x-ray reflection, indicating that the structural changes of the film with power do not relate to bulk density changes. The x-ray and ellipsometry measurements indicate the existence of a transitional layer with monolayer dimensions at the Si/SiO2 interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 57
Copyright
Copyright © Materials Research Society 1994

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References

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