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Effect of Radiation in Solid during SiC Sublimation Growth

Published online by Cambridge University Press:  01 February 2011

Shin-ichi Nishizawa ,
Shin-ichi Nakashima  and
Tomohisa Kato
Shin-ichi Nishizawa
Affiliation:
s.nishizawa@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Shin-ichi Nakashima
Affiliation:
nakashima-s@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8568, Japan
Tomohisa Kato
Affiliation:
t-kato@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8568, Japan
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Abstract

The effect of infrared absorption on SiC sublimation growth was numerically investigated. At first, absorption coefficient was estimated as function of doping concentration. Then temperature distribution inside a crucible was numerically analyzed with taking account of absorption in growing crystal. It was pointed out that temperature distribution in a growing crystal strongly depends on absorption coefficient, i.e. doping concentration. As increasing the absorption coefficient, the growth front temperature and temperature gradient inside a growing crystal increase. It might cause large thermal stress and affect the grown crystal quality. This agrees well with growth features in experiment. The growth condition should be determined with taking account of absorption coefficient, i.e. doping concentration.

Keywords

crystal growthsimulationabsorption
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B01-02
Copyright
Copyright © Materials Research Society 2006

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