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The Effect Of Si And Mg Doping In The Microstructure Of Epitaxially Grown Gan

Published online by Cambridge University Press:  10 February 2011

M. Katsikini ,
E. C. Paloura ,
M. Fieber-Erdmann ,
E. Holub-Krappe  and
T. D. Moustakas
M. Katsikini
Affiliation:
Dept. of Physics, Aristotle Univ. of Thessaloniki, 54006 Thessaloniki, Greece Hahn-Meitner Institute (A.S.), Glienicker 100, 14109 Berlin, Germany
E. C. Paloura
Affiliation:
Dept. of Physics, Aristotle Univ. of Thessaloniki, 54006 Thessaloniki, Greece
M. Fieber-Erdmann
Affiliation:
Hahn-Meitner Institute (A.S.), Glienicker 100, 14109 Berlin, Germany
E. Holub-Krappe
Affiliation:
Hahn-Meitner Institute (A.S.), Glienicker 100, 14109 Berlin, Germany
T. D. Moustakas
Affiliation:
Photonics Center & Dept. of Electrical and Computer Engineering, Boston University, Boston MA 02215, U.S.A.
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Abstract

The effect of p- and n-type doping (using Mg and Si, respectively) in the microstructure of GaN, grown epitaxially on (0001)Al2O3 and (111)Si, is studied with X-ray absorption measurements at the N-K-edge. A distortion in the local microstructure around the N atom is detected in the undoped and the Mg doped samples. The N atom is 4-fold coordinated with n Ga atoms in the expected distance and 4-n atoms at a distance longer by 0.28Å, where 2.9 < n < 3.3. Such a distortion, which is attributed to the inward relaxation and the strong interaction between the Ga atoms surrounding the nitrogen vacancies (VN), does not exist in the Si doped sample (carrier concentration=1.57×1018cm−3) where the formation of VN is suppressed due to the n-type doping. However, in GaN:Si the N atom is undercoordinated with 3.3 nearest neighbors instead of 4. This undercoordination indicates the presence of VGa and/or NGa antisite defects. Finally, from the nearest neigbohr distances the lattice parameters were calculated and it is found that although the a and c vary by about 1.5%, the ratio of the lattice constants, c/a, remains constant and equal to 1.63.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 381
Copyright
Copyright © Materials Research Society 1998

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