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Effect of the annealing treatments on the transport and electroluminescence properties of SiO2 layers doped with Er and Si nanoclusters.

Published online by Cambridge University Press:  16 September 2011

O. Jambois ,
J.M Ramirez ,
Y. Berencen ,
D. Navarro-Urrios ,
S. Hernández ,
A. Anopchenko ,
A. Marconi ,
N. Prtljaga ,
N. Daldosso  and
L. Pavesi
...Show all authors
O. Jambois
Affiliation:
Departament d’Electrònica, Universitat de Barcelona, Carrer Martì i Franquès 1, Barcelona 08028, Spain
J.M Ramirez
Affiliation:
Departament d’Electrònica, Universitat de Barcelona, Carrer Martì i Franquès 1, Barcelona 08028, Spain
Y. Berencen
Affiliation:
Departament d’Electrònica, Universitat de Barcelona, Carrer Martì i Franquès 1, Barcelona 08028, Spain
D. Navarro-Urrios
Affiliation:
Departament d’Electrònica, Universitat de Barcelona, Carrer Martì i Franquès 1, Barcelona 08028, Spain
S. Hernández
Affiliation:
Departament d’Electrònica, Universitat de Barcelona, Carrer Martì i Franquès 1, Barcelona 08028, Spain
A. Anopchenko
Affiliation:
Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, Povo (Trento) 38123, Italy
A. Marconi
Affiliation:
Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, Povo (Trento) 38123, Italy
N. Prtljaga
Affiliation:
Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, Povo (Trento) 38123, Italy
N. Daldosso
Affiliation:
Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, Povo (Trento) 38123, Italy
L. Pavesi
Affiliation:
Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, Povo (Trento) 38123, Italy
J.-P. Colonna
Affiliation:
CEA,LETI, Minatec 17 rue des Martyrs, 38054 Grenoble cedex 9, France
J.-M. Fedeli
Affiliation:
CEA,LETI, Minatec 17 rue des Martyrs, 38054 Grenoble cedex 9, France
B. Garrido
Affiliation:
Departament d’Electrònica, Universitat de Barcelona, Carrer Martì i Franquès 1, Barcelona 08028, Spain
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Abstract

We studied the effect of RTP and furnace annealing on the transport properties and electroluminescence of Si-nc embedded in SiO2 layers, and of Er ions coupled to Si-nc. The light emitting devices have been fabricated in a CMOS line by implantation of Si and Er in SiO2. The results show that for the same annealing temperature, furnace annealing decreases electrical conductivity and increases probability of impact excitation, which leads to an improved external quantum efficiency. Correlations between phenomenological transport models, annealing regimes, and erbium electroluminescence are observed and discussed.

Keywords

luminescencenanostructureEr

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References

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