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Effect of Thermoelastic Stress on the Pressure Response of a Composite SiO2/Si Membrane

Published online by Cambridge University Press:  15 February 2011

C. Malhaire ,
M. Le Berre  and
D. Barbier
C. Malhaire
Affiliation:
INSA LYON, LPM UMR C5511, 20 av. Einstein, 69621 Villeurbanne Cedex, Francemalhaire@insa.insa-lyon.fr
M. Le Berre
Affiliation:
INSA LYON, LPM UMR C5511, 20 av. Einstein, 69621 Villeurbanne Cedex, Francemalhaire@insa.insa-lyon.fr
D. Barbier
Affiliation:
INSA LYON, LPM UMR C5511, 20 av. Einstein, 69621 Villeurbanne Cedex, Francemalhaire@insa.insa-lyon.fr
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Abstract

The layout design of membrane-based sensors such as Silicon On Insulator micromachined pressure sensors requires the knowledge of the mechanical behavior of the complete structure as a function of pressure and temperature. Unfortunately, as a result of thermal mismatch, large stresses usually exist in composite SiO2/Si membranes that significantly affect the pressure response of such sensors, We present here an original study on the 3D-FEM modeling (ANSYS) of pre-stressed SiO2/Si membranes submitted to pressure. The model of thermoelastic stress (without any applied pressure) has been first validated by optical profilometry deflection measurements. 2.94 mm width membranes with Si thickness varying from 10.7 to 19.3 μm, as measured by FT-IR, and covered with 1.46 μm thick thermal oxide grown at 1130°C, have been studied. Thermoelastic deflections from I to 25 μm have been measured for decreasing Si thickness in agreement with the simulation. The simulated longitudinal stress relaxation over the oxide varies from 5 to 40 MPa between the membrane center and the frame when decreasing membrane thickness. Under pressure (10 and 100 mbar) and for a 19.3 μm thick composite membrane (0.5 )μm thick oxide), the calculated strains can exceed by 20% that of a bare Si one, due to a lower overall stiffness produced by the oxide compressive stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 444: Symposium I – Materials for Mechanical and Optical Microsystems , 1996 , 137
Copyright
Copyright © Materials Research Society 1997

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References

1. Steinmann, R., Friemann, H., Prescher, C. & Schellin, R., Sensors & Actuators. A 48, 37 (1995).Google Scholar
2. Obieta, I., Castaño, E. and Gracia, F. J., Sensors and Actuators. A 46–47, 161 (1995).Google Scholar
3. Pourahmadi, F., Barth, P. and Petersen, K., Sensors and Actuators. A 21–23, 850 (1990).Google Scholar
4. Bonnotte, E., Delobelle, P., Borier, L., Trolard, B. & Tribillon, G., J. de Phys. III. 5, 953 (1995).Google Scholar
5. EerNisse, E. P., Appl. Phys. Lett. 35(1), 8 (1979)Google Scholar
6. Blech, I. and Cohen, U., J. Appl. Phys. 53(6), 4202 (1982).Google Scholar
7. General Electric Doc. N°7700, october 1986.Google Scholar
8. Soma, T. and Kagaya, H. Matsuo, in Proper-ties of Silicon, published by INSPEC (EMIS Datareviews series n°4, London and New York, 1988), pp. 33–34.Google Scholar
9. Lin, S. C. H. and Pugacz-Muraszkiewicz, I., J. Appl. Phys. 43(1), 119 (1972).Google Scholar
10. Conru, H. W., J. Appl. Phys. 47(5), 2079 (1976).Google Scholar
11. Bourgeois, C., Hermann, J., Blanc, N., De Rooij, N. F. and Rudolf, F. Presented at the 8th Int. Conf. on Solid State Sensors and Actuators, Stockholm, Sweden, June 25–29, 1995.Google Scholar
12. Wortman, J. J. and Evans, R. A.. J. Appl. Phys. 36(1), 153 (1965).Google Scholar
13. Hu, S. M., in Process Physics and Modeling in Semiconductor Technology, edited by Srinivasan, G. R. (The Electrochem. Soc., Proc. 91.4, New York, 1991), pp. 548–582.Google Scholar
14. Jaccodine, R. J. and Schlegel, W. A., J. Appl. Phys. 37(6), 2429 (1966).Google Scholar
15. Blech, I. and Robles, S., Solid State Technology. 37(9), 75 (1994).Google Scholar
16. Guyot, Y., Malhaire, C., Berre, M. Le, Champagnon, B., Sibai, A., Bustarret, E., Barbier, D., accepted in Mat. Sci. Eng. B (1996).Google Scholar
17. Malhaire, C., Berre, M. Le, Barbier, D., Mater. Res. Soc. Symp. I, Fall'96Google Scholar