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Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3

Published online by Cambridge University Press:  10 February 2011

N. Grandjean ,
M. Leroux ,
J. Massies ,
M. Mesrine  and
P. Lorenzini
N. Grandjean
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France.
M. Leroux
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France.
J. Massies
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France.
M. Mesrine
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France.
P. Lorenzini
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France.
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Abstract

Ammonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 69
Copyright
Copyright © Materials Research Society 1998

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References

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