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Effective Channel Mobility in Epitaxial and Implanted 4H-SiC Lateral MOSFETs

Published online by Cambridge University Press:  01 February 2011

Sarah Kay Haney ,
Sei-Hyung Ryu ,
Sarit Dhar ,
Anant Agarwal  and
Mark Johnson
Sarah Kay Haney
Affiliation:
sarah_haney@cree.com, Cree, Inc, Power R&D, 4600 Silicon Drive, Durham, NC 27703, USA, Durham, NC, 27703, United States, 919 287 7555, 919 313 5696
Sei-Hyung Ryu
Affiliation:
sei-hyung_ryu@cree.com, Cree, Inc, Power R&D, 4600 Silicon Drive, Durham, NC, 27703, United States
Sarit Dhar
Affiliation:
sarit_dhar@cree.com, Cree, Inc, Power R&D, 4600 Silicon Drive, Durham, NC, 27703, United States
Anant Agarwal
Affiliation:
anant_agarwal@cree.com, Cree, Inc, Power R&D, 4600 Silicon Drive, Durham, NC, 27703, United States
Mark Johnson
Affiliation:
majohns2@ncsu.edu, North Carolina State University, Department of Materials Science, Raleigh, NC, 27695, United States
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Abstract

In this paper, we investigate the effective inversion layer mobility of lateral 4H-SiC MOSFETs. Initially, lateral n-channel MOSFETs were fabricated to determine the effect of p-type epi-regrowth on a highly doped p-well surface. The negative effects of the high p-well doping are still seen with 1500 Å p-type regrowth, while growing 0.5 um or more appears to be sufficient to grow out of the damaged area. A second experiment was performed to examine the effects of doping during epitaxial regrowth versus using ion implantation after regrowth. Comparable mobilities and threshold voltages were observed for equivalent epitaxial and implanted doping concentrations.

Keywords

defectsion-implantationdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D07-18
Copyright
Copyright © Materials Research Society 2008

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References

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