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Effects of Arsenic Doping on the Solidification Dynamics ofPulsed-Laser-Melted Silicon

Published online by Cambridge University Press:  25 February 2011

Michael O. Thompson ,
P. S. Peercy  and
J. Y. Tsao
Michael O. Thompson
Affiliation:
On leave Dept. of Materials Science Cornell University, Ithaca,NY 14853
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

The effects of arsenic doping on the solidification dynamics during pulsedmelting of silicon have been studied using the transient conductancetechnique. At As concentrations below 1 at.%, the incorporation of As intothe Si lattice results in negligible differences in the solidificationdynamics. Between 2 and 7 at.% As, however, the interface velocity isdramatically modified as the liquid-solid interface crosses the Ascontaining region. These velocity changes are consistent with a reducedmelting temperature for Si-As alloys. For concentrations of 11 at.% As, thedepression in the melting temperature is sufficient to allow the surface tosolidify while considerable melt remains buried within the sample. At 16at.%, the melting temperature is drastically reduced and internal nucleationof melt occurs prior to normal surface melting.

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References

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