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Effects of Impurities on the Competition between Solid PhaseEpitaxy and Random Crystallization In Ion-Implanted Silicon

Published online by Cambridge University Press:  25 February 2011

G.L. Olson ,
J.A. Roth ,
Y. Rytz-Froidevaux  and
J. Narayan
G.L. Olson
Affiliation:
Research Laboratories, Malibu, CA 90265
J.A. Roth
Affiliation:
Research Laboratories, Malibu, CA 90265
Y. Rytz-Froidevaux
Affiliation:
Research Laboratories, Malibu, CA 90265
J. Narayan
Affiliation:
Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
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Abstract

The temperature dependent competition between solid phase epitaxy and randomcrystallization in ion-implanted (As+, B+, F+, and BF2+) silicon films is investigated. Measurements of time-resolvedreflectivity during cw laser heating show that in the As+, F+, and BF2+-implanted layers (conc 4×1020cm-3)epitaxial growth is disrupted at temperatures 1000°C. This effect is notobserved in intrinsic films or in the B+-implanted layers.Correlation with results of microstructural analyses and computer simulationof the reflectivity experiment indicates that disruption of epitaxy iscaused by enhancement of the random crystallization rate by arsenic andfluorine. Kinetics parameters for the enhanced crystallization process aredetermined; results are interpreted in terms of impurity-catalyzednucleation during the random crystallization process.

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References

REFERENCES

1. Olson, G.L., Kokorowski, S.A., Roth, J.A., and Hess, L.D., Mat. Res. Soc. Symp. Proc. 13, 141 (1983).Google Scholar
2. Roth, J.A., Kokorowski, S.A., Olson, G.L., and Hess, L.D., Mat. Res. Soc. Symp. Proc. 4, 169 (1982); Roth, J.A., Olson, G.L., and Hess, L.D. Mat. Res. Soc. Symp. Proc. 23, 431 (1984).Google Scholar
3. Csepregi, L., Kennedy, E.F., Gallagher, T.J., Mayer, J.W., and Sigmon, T.W., J. Appl. Phys. 48, 4234 (1977).Google Scholar
4. Olson, G.L., Roth, J.A., Hess, L.D., and Narayan, J., Mat. Res. Soc. Symp. Proc. 23, 375 (1984).Google Scholar
5. Olson, G.L., Roth, L.B., and Vasudev, P.K., submitted to Appl. Phys. Lett. Google Scholar
6. Suni, I., Shreter, U., Nicolet, M-A., and Baker, J.E., J. Appl. Phys. 56, 273 (1984).Google Scholar