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Effects of Impurities on the Optical Properties of Quantum Dots, Wires, and Multiple Wells

Published online by Cambridge University Press:  22 February 2011

Garneit W. Bryant
Garneit W. Bryant*
Affiliation:
Microphotonic Devices Branch, US Army Research Laboratory, Adelphi, MD 20783
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Abstract

Identifying and understanding the effects of impurities and defects in quantum dots, wires, and multiple wells is important for the development of nanostructures with good optical properties. Simple model calculations are presented to show when and how shallow impurities affect the radiative recombination of confined electron-hole pairs. Results for nanostructures are compared with results for bulk systems. Qualitative differences between bulk and confined systems are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 49
Copyright
Copyright © Materials Research Society 1994

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