Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-05-25T23:59:00.387Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of ion beam irradiation on the crystallization of Copper films

Published online by Cambridge University Press:  21 February 2011

Shunichi Hishita ,
Keiji Oyoshi ,
Shigeru Suehara  and
Takashi Aizawa
Shunichi Hishita
Affiliation:
National Institute for Research in Inorganic Materials, Namiki, Tsukuba, Ibaraki 305 Japan, hishita@nirim.go.jp
Keiji Oyoshi
Affiliation:
National Institute for Research in Inorganic Materials, Namiki, Tsukuba, Ibaraki 305 Japan, hishita@nirim.go.jp
Shigeru Suehara
Affiliation:
National Institute for Research in Inorganic Materials, Namiki, Tsukuba, Ibaraki 305 Japan, hishita@nirim.go.jp
Takashi Aizawa
Affiliation:
National Institute for Research in Inorganic Materials, Namiki, Tsukuba, Ibaraki 305 Japan, hishita@nirim.go.jp
Get access

Abstract

Radiation effects of 2 MeV Ar+ ions on the crystallization of copper films were investigated with or without oxygen adsorption. Metal copper films of 1-5 nm thickness deposited on SrTiO3 (100) at 300K. by evaporation consisted of fine crystals with random orientation. The crystals were grown without epitaxial relationship to the substrate by ion irradiation. The epitaxial growth of copper crystals was achieved by the combined use of oxygen adsorption and ion irradiation. The epitaxial relationship between the film and the substrate was determined Cu (100) // SrTiO3( 100) and Cu [001] // SrTiO3 [001].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 195
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Golecki, I., Chapman, G.E., Lau, S.S., Tsaur, B.Y., and Mayer, J.W., Phys.Lett. 71A, 267 (1979).Google Scholar
2 Linnros, J., Svensson, B., and Holmén, G., Phys.Rev. B30, 3629 (1984).Google Scholar
3 Williams, J.S., Elliman, R.G., Brown, W.L., and Seidel, T.E., Phys.Rev.Lett. 55, 1482 (1985).Google Scholar
4 Nielsen, B.B. and Andersen, J.U., Phys.Rev. B35, 2732 (1987).Google Scholar
5 Priolo, F., La Ferla, A., Spinella, C., Rimini, E., Ferla, G., Baroetto, F., and Licciardello, A., Appl.Phys.Lelt. 53, 2605 (1988).Google Scholar
6 Elliman, R.G., Ridgway, M.C., Williams, J.S., and Bean, J.C., Appl.Phys.Lett. 55, 843 (1989).Google Scholar
7 Johnson, S.T., Elliman, R.G., and Williams, J.S., Nucl.Instrum.Methods B39, p449 (1989).Google Scholar
8 Kobayashi, N., Kobayashi, H., Tanoue, H., Hayashi, N., and Kumashiro, Y., in Beam-Solid Interactions: Physical Phenomena, edited by Borgesen, P., Knapp, J.A., and Zuhr, R.A. (Mater. Res. Soc, Pittsburgh, PA, 1990), pp.119.Google Scholar
9 Ridgway, M.C., Palmer, G.R., Elliman, R.G., Davies, J.A., and Williams, J.S., Appl.Phys.Lett. 58, 487 (1991).Google Scholar
10 Ziegler, J.F. and Biersack, J.P., TRIM version 92, 1992.Google Scholar
11 for example, Wuttig, M., Franchy, R., and Ibach, H., Surf.Sci. 213, 103 (1989).Google Scholar
12 Baddorf, A.P. and Wendelken, J.F., Surf.Sci. 256, 264 (1991).Google Scholar