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Effects of Laser Annealing on the Furnace Annealed Amorphous Silicon Thin Films

Published online by Cambridge University Press:  10 February 2011

Kwon-Young Choi ,
Jae-Hong Jeon ,
Min-Koo Han  and
Yong-Sang Kim
Kwon-Young Choi
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
Jae-Hong Jeon
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
Min-Koo Han
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
Yong-Sang Kim
Affiliation:
Department of Electrical Engineering, Myongji University, Kyonggi-do, Korea
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Abstract

The performance of polysilicon thin film transistors fabricated by two-step annealing, which consists of furnace annealing and subsequent excimer laser annealing, is described. It was found that the average grain size of low temperature furnace annealed polysilicon films was several times larger than that of excimer laser annealed polysilicon films while the density of in-grain defect in low temperature furnace annealed films was much higher than that of excimer laser annealed film. The device characteristics of the low temperature furnace annealed polysilicon thin film transistors were improved significantly by postannealing, such as high temperature furnace annealing and excimer laser annealing, due to the effective elimination of in-grain defects. The density of trap states, which was extracted from the transfer curves of polysilicon thin film transistors, was used to demonstrate the effects of modifying the deep and tail trap levels by two-step annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 317
Copyright
Copyright © Materials Research Society 1996

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