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Effects of N2 Plasma Treatment on SiO2 Gate Insulator in a-Si:H Thin Film Transistor

Published online by Cambridge University Press:  16 February 2011

Sung Chul Kim ,
Sung Sig Bae ,
Eui Yeol Oh ,
Jeong Hyun Kim ,
Jong Wan Lee ,
Cha Yeon Kim  and
Donggil Kim
Sung Chul Kim
Affiliation:
LCD Research Laboratory, GoldStar Co., LTD., 533 Hogae-dong, Anyang-shi, Kyongki-do, 430–080, Korea
Sung Sig Bae
Affiliation:
LCD Research Laboratory, GoldStar Co., LTD., 533 Hogae-dong, Anyang-shi, Kyongki-do, 430–080, Korea
Eui Yeol Oh
Affiliation:
LCD Research Laboratory, GoldStar Co., LTD., 533 Hogae-dong, Anyang-shi, Kyongki-do, 430–080, Korea
Jeong Hyun Kim
Affiliation:
LCD Research Laboratory, GoldStar Co., LTD., 533 Hogae-dong, Anyang-shi, Kyongki-do, 430–080, Korea
Jong Wan Lee
Affiliation:
Central Research Laboratory, GoldStar Co., LTD., 16 Woomyeon-dong, Seocho-gu, Seoul, 137–140, Korea
Cha Yeon Kim
Affiliation:
Central Research Laboratory, GoldStar Co., LTD., 16 Woomyeon-dong, Seocho-gu, Seoul, 137–140, Korea
Donggil Kim
Affiliation:
LCD Research Laboratory, GoldStar Co., LTD., 533 Hogae-dong, Anyang-shi, Kyongki-do, 430–080, Korea
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Abstract

We fabricated the high performance a-Si:H TFT using the N2 plasma treated APCVD SiO2 as a gate insulator. The effects of N2 plasma treatment on the APCVD SiO2 were investigated by XPS and SIMS Measurements. And the formation of the oxynitride interface layer between a-Si:H and APCVD SiO2 was found in the a-Si:H TFT. From our experimental results, It May be concluded that most nitrogen atoms, which were incorporated by the exposure of SiO2 layer to N2 plasma, exist, not bonded to other atoms, near the surface of the SiO2 layer and during the sequential deposition of a-Si:H on the N2 plasma treated APCVD SiO2 layer Si-N bonds are formed, resulting in the oxynitride layer in the interface region. This explains the high performance a-Si:H TFT with the N2 plasma treated APCVD SiO2 gate insulator.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 775
Copyright
Copyright © Materials Research Society 1994

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References

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