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  • MRS Proceedings, Volume 994
  • January 2007, 0994-F10-01

Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon

  • Nikolas Zographos (a1), Christoph Zechner (a1) and Ibrahim Avci (a2)
  • DOI:
  • Published online: 21 April 2011

The simulation of deep-submicron silicon-device manufacturing processes relies on predictive models for extended defect clusters. For submicroscopic interstitial clusters and {311} defects, an efficient and highly accurate model for process simulation has been developed and calibrated recently [1]. This model combines equations for three small interstitial clusters and two moments for {311} defects. In this work, we extend this model to include dislocation loops and to reproduce a greatly increased range of experimental data, including thermal annealing of end-of-range defects after amorphizing implants.

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