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Electrical and Optical Characteristics of Delta Doped AlGaN Cladding Layer Materials for Highly Efficient 340nm Ultra Violet LEDs

Published online by Cambridge University Press:  01 February 2011

H. P. Xin ,
J. S. Flynn ,
J. A. Dion ,
E. L. Hutchins ,
H. Antunes ,
L. Fieschi-Corso ,
R. Van Egas ,
G. R. Brandes ,
S. F. LeBoeuf  and
X. A. Cao
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H. P. Xin
Affiliation:
ATMI Inc., 7 Commerce Dr, Danbury, CT 06810, USA
J. S. Flynn
Affiliation:
ATMI Inc., 7 Commerce Dr, Danbury, CT 06810, USA
J. A. Dion
Affiliation:
ATMI Inc., 7 Commerce Dr, Danbury, CT 06810, USA
E. L. Hutchins
Affiliation:
ATMI Inc., 7 Commerce Dr, Danbury, CT 06810, USA
H. Antunes
Affiliation:
ATMI Inc., 7 Commerce Dr, Danbury, CT 06810, USA
L. Fieschi-Corso
Affiliation:
ATMI Inc., 7 Commerce Dr, Danbury, CT 06810, USA
R. Van Egas
Affiliation:
ATMI Inc., 7 Commerce Dr, Danbury, CT 06810, USA
G. R. Brandes
Affiliation:
ATMI Inc., 7 Commerce Dr, Danbury, CT 06810, USA
S. F. LeBoeuf
Affiliation:
General Electric Global Research Center, Niskayuna NY 12309, USA
X. A. Cao
Affiliation:
General Electric Global Research Center, Niskayuna NY 12309, USA
J. L. Garrett
Affiliation:
General Electric Global Research Center, Niskayuna NY 12309, USA
L. B. Rowland
Affiliation:
General Electric Global Research Center, Niskayuna NY 12309, USA
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Abstract

In this paper, we report the electrical and optical characteristics of Si delta-doped AlGaN cladding layers, p-cladding structure optimization and the impact on the efficiency of 340nm AlGaN UV LEDs. Compared to the uniformly doped n-AlGaN layer, adding Si Δ-doping layers reduced the sheet resistance by improving both the Hall mobility and carrier concentration. Increasing the number of Si Δ-doped layers further lowered the sheet resistance without cracking the material. The Δ-doped layers in n-Al0.3Ga0.7N improved the optical properties by enhancing near band edge emission as much as 2-fold relative to deep level emission. Additionally, Δ-doping in n-AlGaN layers had no detrimental effect on the optical transparency of the LEDs. The p-cladding layer was found to have a strong absorption at 340nm. Reducing the p-GaN cap layer from 35nm to 10nm tripled the light emission intensity. By optimizing the n- and p-AlGaN cladding layers, a highly efficient UV LED at 340nm was achieved with 1mW output under 800mA/mm2 DC drive current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y3.10
Copyright
Copyright © Materials Research Society 2004

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References

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