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Electrical and Photo-Induced Effects in Graphene Channels When Interfaced with Quantum Dots

Published online by Cambridge University Press:  23 March 2015

Xin Miao ,
Samarth Trivedi  and
Haim Grebel
Xin Miao
Affiliation:
Electronic Imaging Center and ECE Dept., New Jersey Institute of technology (NJIT), Newark, NJ 07102, USA
Samarth Trivedi
Affiliation:
Department of Chemistry, New Jersey Institute of technology (NJIT), Newark, NJ 07102, USA
Haim Grebel
Affiliation:
Electronic Imaging Center and ECE Dept., New Jersey Institute of technology (NJIT), Newark, NJ 07102, USA
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Abstract

Field effect transistors with graphene channels were interfaced with arrays of semiconductor quantum dots (QD). The electrical characteristics of the elements were assessed. The channel response to white light illumination was also assessed as a function of drain-source and gate-source biases.

Keywords

electronic materialnanoscaleoptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1727: Symposium K – Graphene and Graphene Nanocomposites , 2015 , mrsf14-1727-k05-08
Copyright
Copyright © Materials Research Society 2015 

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References

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