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Electrical Characterisation of Shallow Pre-Amorphised +n junctions in silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
An examination of Si+ pre-amorphised p+n structures as a function of Si+ implantation energy and solid phase epitaxial regrowth temperature has revealed three different classes of defect all of which may influence the characteristics of the junction. They are point defects responsible for high concentrations of deep level donors, and interstitial dislocation loops both causing leakage current degradation, and excess silicon interstitials leading to enhanced junction movement.
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- Copyright © Materials Research Society 1988
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