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The Electrical Characteristics of the MOSCAP Structures with W/WNx/poly Si1−XGeX Gates Stack

Published online by Cambridge University Press:  21 March 2011

S.-K. Kang ,
J. J. Kim ,
D.-H. Ko ,
T. H. Ahn ,
I. S. Yeo ,
T. W. Lee  and
Y. H. Lee
S.-K. Kang
Affiliation:
Dept of Ceramic Eng., Yonsei Univ, Seoul, Korea
J. J. Kim
Affiliation:
Dept of Ceramic Eng., Yonsei Univ, Seoul, Korea
D.-H. Ko
Affiliation:
Dept of Ceramic Eng., Yonsei Univ, Seoul, Korea
T. H. Ahn
Affiliation:
Hyundai Electronics Industries Co. Ltd., Kyung-ki do, Korea
I. S. Yeo
Affiliation:
Hyundai Electronics Industries Co. Ltd., Kyung-ki do, Korea
T. W. Lee
Affiliation:
Ju-sung Co. Ltd., Kyung-ki do, Korea
Y. H. Lee
Affiliation:
Ju-sung Co. Ltd., Kyung-ki do, Korea
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Abstract

We investigated the electrical characteristics of the MOSCAP structures with W/WNx/poly Si1−xGex gates stack using C-V and I-V. The low frequency C-V measurements demonstrated that the flat band voltage of the W/WNx /poly Si0.4Ge0.6 stack was lower than that of W/ WNx /poly Si0.2Ge0.8 stack by 0.3V, and showed less gate-poly-depletion-effect than that of W/ WNx /poly- Si0.2Ge0.8 gates due to the increase of dopant activation rate with the increase of Ge content in the poly Si1−xGex films. As Ge content in poly Si1−xGex increased, the leakage current level increased a little due to the increase of direct tunneling and QBD became higher due to the lower boron penetration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K5.9
Copyright
Copyright © Materials Research Society 2001

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References

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