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Electrical Characterization of Beam—Recrystallized Soi Structures Using a Depletion Mode Transistor

Published online by Cambridge University Press:  28 February 2011

D.P. Vu ,
A. Chantre ,
D. Ronzani  and
J.C. Pfister
D.P. Vu
Affiliation:
Centre National d'Etudes des Téléommunications — Chemin du Vieux Chêne — B.P.: 98 – 38243 Meylan Cédex—France
A. Chantre
Affiliation:
Centre National d'Etudes des Téléommunications — Chemin du Vieux Chêne — B.P.: 98 – 38243 Meylan Cédex—France
D. Ronzani
Affiliation:
Centre National d'Etudes des Téléommunications — Chemin du Vieux Chêne — B.P.: 98 – 38243 Meylan Cédex—France
J.C. Pfister
Affiliation:
Centre National d'Etudes des Téléommunications — Chemin du Vieux Chêne — B.P.: 98 – 38243 Meylan Cédex—France
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Abstract

We show that a depletion mode transistor is a very versatile tool for the electrical characterization of SOI structures. We apply it to Si thin films recrystallized by a zone—melting technique in which grainboundaries are localized. Apart from the transportparameters, one can get from drain—source current the information usually determined from a MOS capacitor. Owing to the existence in such a transistor of two MOS structures, we are able to characterize both Si-SiO2 interfaces as well as the “bulk” of the Si film.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 357
Copyright
Copyright © Materials Research Society 1986

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Footnotes

*

Present address: AT&T Bell Laboratories, Murray Hill NJ 07974 – U.S.A.

**

Deceased.

References

Referiences

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