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The Electrical Phenomena of Non-planar Structure and Devices using Plasma Doping

Published online by Cambridge University Press:  01 February 2011

Jong-Heon Yang ,
In-Bok Baek ,
Kiju Im ,
Chang-Geun Ahn ,
Sungkweon Baek ,
Won-ju Cho  and
Seongjae Lee
Jong-Heon Yang
Affiliation:
Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-700, Korea.
In-Bok Baek
Affiliation:
Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-700, Korea.
Kiju Im
Affiliation:
Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-700, Korea.
Chang-Geun Ahn
Affiliation:
Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-700, Korea.
Sungkweon Baek
Affiliation:
Dep. of Materials Science and Engineering, Gwangju Institute of Science and Technology. Oruong-dong, Buk-gu, Gwangju, 500-712, Korea.
Won-ju Cho
Affiliation:
Dep. of Semiconductor and New Materials, Kwangwoon University. 447-1 Wolgye-dong, Nowon-gu, Seoul, 139-701, Korea.
Seongjae Lee
Affiliation:
Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-700, Korea.
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Abstract

We fabricated narrow fins structures and non-planar MOSFETs like FinFETs and triple-gate MOSFETs using plasma doping with substrate heating under 350··, and measured their I-V characteristics. Fins and MOSFETs using low-temperature doping process show good current drivability and low subthreshold slope. However, without post high-temperature thermal annealing, this process could not avoid generating defects and traps as well as mobile protons on the gate and gate oxide interface and junctions, and therefore degraded device reliability. The results of ultra-small MOSFET research show possibility of new memory devices with these traps and ions in devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.15
Copyright
Copyright © Materials Research Society 2005

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