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Electrical Resistivity of Copper Films by Partially Ionized Beam Deposition

Published online by Cambridge University Press:  15 February 2011

S. Han
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
K. H. Yoon
Affiliation:
Dept. of Ceramic Eng. Yonsei Univ., 120–701, Seoul, Korea
K. H. Kim
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
H. G. Jang
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
S. C. Choi
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
H. J. Jung
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
S. K. Koh
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
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Abstract

Copper films on Si(100) were prepared by partially ionized beam at 0 kV and 3 kV acceleration voltages in order to investigate effects of ion energy on electrical property with thickness. X-ray diffraction(XRD) pattern analysis was used to investigate crystallinity of the copper films, microstructure by Scanning electron microscope(SEM) and surface roughness by atomic force microscopy(AFM). The crystallinity of the copper films grown at the 3 kV was more (111) textured than that at the 0 kV. The copper films grown at the both conditions had nearly same grain size below a thickness of 1000 Å. The 1800 Å Cu film grown at the 3 kV was 3 times rough than that at the 0 kV. The resistivity of copper films increased due to surface and grain boundary scattering, and the change of resistivity was discussed in terms of surface roughness, grain size and film density assisted by average depositing energy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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