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Electric-Field Dependence of Photocarrier Properties in the Steady-State Photocarrier Grating Experiment

Published online by Cambridge University Press:  21 March 2011

R. Brüggemann  and
R.I. Badran
R. Brüggemann
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg Germany Email: rudi.brueggemann@uni-oldenburg.de
R.I. Badran
Affiliation:
Physics Department, The Hashemite University, P.O. Box 150459, Zarqa, Jordan Email: rbadran@hu.edu.jo
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Abstract

We apply an experimental variation of the steady-state photocarrier grating technique by monitoring the photoresponse at higher electric fields and thus changing from diffusion to drift determined transport. Evaluation of the field-dependen experimental data is achieved with the analysis by Abel et al. [C.-D. Anel, G.H. Bauer and W. Bloss, Philos. Mag. B 72, 551 (1995)]. We study the photoelectronic properties of microcrystalline silicon samples and deduce the minority carrier diffusion length. From the variation in electric field the trapped charge density, responsible for charge neutrality under illumination, can also be determined. Thus additional information is gained which can be related to the density of states in the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.7
Copyright
Copyright © Materials Research Society 2004

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References

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