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Electromigration Characteristics Under High Frequency Pulsed Current Stressing

Published online by Cambridge University Press:  15 February 2011

Thomas Kwok ,
R. Kaufman  and
B. Davari
Thomas Kwok
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598.
R. Kaufman
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598.
B. Davari
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598.
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Abstract

Electromigration characteristics of Al lines under pulsed current stressing at frequencies 50–200 MHz were measured. Lifetime was found to depend explicitly on both current on-time and current off period. Lifetime increases with t-off as t50 ∝ (t-off)2.2 and decreases with t-on as t50 ∝ (t-on)−0.7. The data indicate no threshold frequency for drastic change in lifetime. Lifetime was also found to increase with duty cycle as t50 ∝ r−2.7, which is a remarkable improvement over an average current density model.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 85
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Kwok, T. and Ho, P.S., in “Diffusion Phenomena in Thin Films”, Noyes Publications, New Jersey (1988), Chap. 7, pp.369–431.Google Scholar
2. Noguchi, T., Hatanaka, K. and Maeguchi, K., in Proc. of 6th Int'l VLSI Multilevel Interconnection Conf., IEEE, ed., (1989), p.183.Google Scholar
3. Ghate, P.B., in Proc. of 20th Int'l Relia. Phys. Symp., IEEE. ed., (1982), p.292.Google Scholar
4. Towner, J.M. and van der Ven, E.P., in Proc. of 21st Int'l Relia. Phys. Symp., IEEE. ed., (1983), p.36.Google Scholar
5. Hiraoka, K. and Yasuda, K., in Proc. of 7th Int'l VLSI Multilevel Interconnection Conf., IEEE. ed., (1990), p.120.Google Scholar