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Electromigration Reliability Simulator

Published online by Cambridge University Press:  15 February 2011

J. Niehof ,
D. C. L. van Geest  and
J. F. Verwey
J. Niehof
Affiliation:
Faculty of Electrical Engineering, University of Twente P.O. Box 217, 7500 AE Enschede The Netherlands
D. C. L. van Geest
Affiliation:
Faculty of Electrical Engineering, University of Twente P.O. Box 217, 7500 AE Enschede The Netherlands
J. F. Verwey
Affiliation:
Faculty of Electrical Engineering, University of Twente P.O. Box 217, 7500 AE Enschede The Netherlands
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Abstract

In our development of a reliability circuit simulator, capable of indicating the most vulnerable spots for failure caused by electromigration, we use two levels: circuit and physical level. On circuit level a new approach towards reliability called the stressor/susceptibility method is used. On physical level 2D electromi.ration simulations can be performed on metallization structures. The atomic redistribution and the consequent resistance change due to electromigration can be calculated.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 51
Copyright
Copyright © Materials Research Society 1992

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References

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