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Electron Beam Irradiated Effects of SiO2 in Stem

Published online by Cambridge University Press:  16 February 2011

Tan-Chen Lee  and
John Silcox
Tan-Chen Lee
Affiliation:
Department of Materials Science and Engineering, School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
John Silcox
Affiliation:
Engineering, School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
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Abstract

Electron beam irradiation effects in SiO2 have been studied by STEM (Scanning Transmission Electron Microscopy). Oxygen loss and the corresponding transformation from SiO2 to Si in SiO2 are confirmed and consistent with previous reports 1,2. A “flower-like” Si rich area, which might not be observed in STEM BF (Bright Field) or ADF (Annular Dark Field) images, was found in Si plasmon energy filtered images. Quantification of the observations and the formation mechanisms leading to the Si-rich area are discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 335
Copyright
Copyright © Materials Research Society 1995

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References

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