Hostname: page-component-54dcc4c588-tfzs5 Total loading time: 0 Render date: 2025-09-11T18:01:38.220Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Cyclotron Resonance Hydrogenation of Poly-Si Thin Film Transistors on SiO2/Si Substrates

Published online by Cambridge University Press:  16 February 2011

Gand Liu ,
Robert A. Ditizio ,
Stephen J. Fonash  and
Nang Tran
Gand Liu
Affiliation:
Center for Electronic Materials and Processing, Pennsylvania State University, University Park, PA
Robert A. Ditizio
Affiliation:
Center for Electronic Materials and Processing, Pennsylvania State University, University Park, PA
Stephen J. Fonash
Affiliation:
Center for Electronic Materials and Processing, Pennsylvania State University, University Park, PA
Nang Tran
Affiliation:
3M Information and Imaging Technology Sector, St. Paul, MN.
Get access

Abstract

We report the results of an ECR hydrogenation time-behavior study on polycrystalline silicon thin film transistors. The device characteristics, such as mobility, subthreshold slope, threshold voltage, off current and on/off current ratio, were measured as a function of the passivation time. It was found that there is an optimal passivation time for this particular TFT structure, and overexposure to ECR hydrogen plasma may cause the degradation of some device parameters.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 121
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Hseih, B., Hatalis, M. K., Greve, D. W., IEEE Trans Electron Device, ED-35, 1842 (1988).Google Scholar
2. Wu, I-Wei, Huang, Tiao-Yuan, Jackson, Warren B.. Lewis, Alan G., and Chiang, Anne, IEEE Electron Device Lett., 12, 181 (1991).Google Scholar
3. Ditizio, R. A., Liu, G., and Fonash, S. J., Appl. Phys. Lett., 56(12), 1140 (1990).Google Scholar
4. De Groot, A. W., Card, Howard C., IEEE Trans Electron Device, ED-31, 1365 (1984).Google Scholar
5. De Groot, A. W., Card, Howard C., IEEE Trans Electron Device, ED-31, 1370 (1984.Google Scholar