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Electronic and Structural Characterization of the Near Surface Layer and the Bulk in νc-Si:H Prepared with Hydrogen dilution

Published online by Cambridge University Press:  21 February 2011

Samer Aljishi ,
Shu Jin ,
Martin Stutzmann  and
Lothar Ley
Samer Aljishi
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, F.R.G
Shu Jin
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, F.R.G
Martin Stutzmann
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, F.R.G
Lothar Ley
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, F.R.G
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Abstract

The near surface layer and the bulk of νc-Si:H prepared with hydrogen dilution are investigated by Raman, optical absorption, and total yield photoelectron spectroscopies. The results show that for low hydrogen dilution ratios, microcrystallites appear in the bulk while the growing surface layer remains amorphous, indicating that microcrystallite formation takes place primarily in the sub-surface layer. At high hydrogen dilution ratios, microcrystallites are detected at both the bulk and the near surface layer. The defect density and hydrogen bonding configurations at various hydrogen dilution levels are presented.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 51
Copyright
Copyright © Materials Research Society 1990

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References

[1] Matsuda, A., J. Non-Cryst. Solids 59&60, 767 (1983).Google Scholar
[2] Tsai, C.C., Thompson, R., Doland, C., Ponce, F.A., Anderson, G.B. and Wacker, B., Mat. Res. Soc. Symp. Proc. 118, 49 (1988).Google Scholar
[3] Veprek, S., Heintze, M., Sarott, F.A., Jurcik-Rajman, M. and Willmott, P., Mat. Res. Soc. Symp. Proc. 118, 3 (1988).Google Scholar
[4] Winer, K., Hirabayashi, I., and Ley, L., Phys. Rev. B 38, 7680 (1988).Google Scholar
[5] Tsu, R., J. Gonzalez-Hernandez, Chao, S.S., Lee, S.C. and Tanaka, K., Appl. Phys. Lett. 40, 534 (1982).Google Scholar
[6] Eden, R.C., Ph.D. thesis, Stanford University (1967).Google Scholar