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Electronic Structure of Planar Faults in Tial

Published online by Cambridge University Press:  26 February 2011

C. Woodward
Affiliation:
Universal Energy Systems Inc.Dayton Ohio 45432.
J. M. Maclaren
Affiliation:
Systran Co., Dayton, Ohio 45432,
S. Rao
Affiliation:
NRC Research Associate, Wright Research and Development Center, MLLM, Wright-Patterson AFB, Ohio 45433–6533.
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Abstract

The mechanical behavior of intermetallic alloys is related to crystal bonding and the influence of bonding on the core structure of dislocations formed in these compounds. These combined effects influence the deformation behavior in an, as yet, undefined manner. However, in a way that gives rise to unusual behavior, such as the anomalous temperature dependence of flow stress observed in TiAl. Recent studies have suggested a particular relationship between the directional bonding in TiAl and dislocation mobility. To better understand the flow behavior of intermetallics, and as a beginning toward bridging the gap between electronic structure and flow behavior, we have calculated the electronic structure of various planar faults in TiAl. The self consistent electronic structure has been determined using the layered Korringa Kohn Rostoker (LKKR) method which embeds the region containing the defect between two semi-infinite perfect crystals. Calculated defect energies agree reasonably well with other theoretical estimates, though overestimating experimental values. The changes in bonding taking place in the vicinity of the planar defect will be discussed and illustrated through the density of states and charge density plots.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Kawabata, T., Kania, T., and Izumi, O., Acta Metall. 33, 1355 (1985).Google Scholar
[2] Lipsitt, H. A., Shechtman, D., Schafrik, R. E., Metall. Trans. 6A, 1991 (1975).CrossRefGoogle Scholar
[3] Paidar, V., Pope, D. P. and Vitek, V., Acta Metall. 32, 435 (1984).CrossRefGoogle Scholar
[4] Hug, G., Loiseau, A. and Lasalmonie, A., Phil. Mag. A54, 47 (1986)CrossRefGoogle Scholar
[5] Hug, G., Loiseau, A. and Veyssiere, P., Phil. Mag. A54, 499 (1988).CrossRefGoogle Scholar
[6] Hug, G. and Veyssiere, P., Int. Symp.on Elect. Micr., Dreseden, 1989.Google Scholar
[7] Greenberg, B. F., Anisimov, V. I., Gornostirev, Yu. N. and Taluts, G. G., Scripta Met. 22, 859 (1988).CrossRefGoogle Scholar
[8] Morinaga, M., Saito, J., Yukawa, N. and Adachi, H., Acta Metall. 38, 25 (1990).CrossRefGoogle Scholar
[9] Fu, C. L. and Yoo, M. H., Mat. Res. Soc. Symp. Proc., Vol. 186, (1990).CrossRefGoogle Scholar
[10] MacLaren, J. M., Crampin, S., Vvedensky, D. D., and Pendry, J. B., Phys. Rev. B40, 12164 (1989);CrossRefGoogle Scholar
[10a] Zhang, X.-G., Gonis, A. and Maclaren, J., Phys. Rev. B40, 3694 (1989).CrossRefGoogle Scholar
[11] MacLaren, J. M., Crampin, S. and Vvedensky, D. D., Phys. Rev. B40, 12176 (1989).CrossRefGoogle Scholar
[12] Bumps, E. S., Kessler, H. D., and Hanson, M., Trans. AIME 194, 609 (1952).Google Scholar
[13] Yoo, M. H. and Loh, B. T. M., ORNL-TM-3408, (1971).Google Scholar