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Elevated Temperature Implantation of GaAs With Si Ions

Published online by Cambridge University Press:  15 February 2011

R. A. Bhown  and
J. S. Williams
R. A. Bhown
Affiliation:
Electronic Materials Engineering. Research School of Physical Sciences and Engineering, Australian National University, Canberra, A. C. T. 0200, Australia
J. S. Williams
Affiliation:
Electronic Materials Engineering. Research School of Physical Sciences and Engineering, Australian National University, Canberra, A. C. T. 0200, Australia
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Abstbact

The formation of amnorphous layers in GaAs during ion bombardment at elevated temperatures, where dynamic annealing of radiation-induced defects is substantial, is shown to be extremely sensitive to the ion flux. fluence. and implantation temperature. For example. with increasing fluence. damage can first build up extremely slowly. then suddenly collapse to the amorphous phase. Alternatively. for a constant ion fluence, a change in flux by one order of magnitude can change the critical temperature for amorphisation by 27°C. and at constant flux and fluence. a change of only 6°C can alter the residual damage from small clusters barely visible by conventional transmission electron microscopy and Rutherlord backscattering to a thick amorphous layer. The temperature at which this occurs is strongly dependent upon the ion flux and fluence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 191
Copyright
Copyright © Materials Research Society 1997

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