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Emission spectra study of plasma enhanced chemical vapor deposition of intrinsic, n+, and p+ amorphous silicon thin films

Published online by Cambridge University Press:  25 July 2013

I-Syuan Lee  and
Yue Kuo
I-Syuan Lee
Affiliation:
Thin Film Nano &Microelectronics Research Laboratory, Texas A&M University, College Station, TX, 77843
Yue Kuo
Affiliation:
Thin Film Nano &Microelectronics Research Laboratory, Texas A&M University, College Station, TX, 77843
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Abstract

The PECVD intrinsic, n+, and p+ a-Si:H thin film deposition processes have been studied by the optical emission spectroscope to monitor the plasma phase chemistry. Process parameters, such as the plasma power, pressure, and gas flow rate, were correlated to SiH*, Hα*, and Hβ* optical intensities. For all films, the deposition rate increases with the increase of the SiH* intensity. For the doped films, the Hα*/SiH* ratio is a critical factor affecting the resistivity. The existence of PH3 or B2H6 in the feed stream enhances the deposition rate. Changes of the free radicals intensities can be used to explain variation of film characteristics under different deposition conditions.

Keywords

chemical vapor deposition (CVD) (deposition)dopantthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1536: Symposium A – Film Silicon Science and Technology , 2013 , pp. 133 - 138
Copyright
Copyright © Materials Research Society 2013 

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