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Energy-Back-Transfer Process in Rare-Earth Doped AlGaN

Published online by Cambridge University Press:  01 February 2011

A. Wakahara ,
T. Fujiwara ,
H. Okada ,
A. Yoshida ,
T. Ohshima  and
H. Itho
A. Wakahara
Affiliation:
Department of Electrical & Electronic Engineering, Toyohashi University of Technology, Toyohashi 441-8580, JAPAN
T. Fujiwara
Affiliation:
Department of Electrical & Electronic Engineering, Toyohashi University of Technology, Toyohashi 441-8580, JAPAN
H. Okada
Affiliation:
Department of Electrical & Electronic Engineering, Toyohashi University of Technology, Toyohashi 441-8580, JAPAN
A. Yoshida
Affiliation:
Department of Electrical & Electronic Engineering, Toyohashi University of Technology, Toyohashi 441-8580, JAPAN
T. Ohshima
Affiliation:
Department of Material Development, JAERI-Takasaki, Takasaki, 370-1292, Japan
H. Itho
Affiliation:
Department of Material Development, JAERI-Takasaki, Takasaki, 370-1292, Japan
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Abstract

Temperature dependence of time-resolved photoluminescence (PL) properties for rare-earth ions (REIs: Eu, Tb, and Er) implanted AlxGa1-xN (x=0∼1) is investigated. Thermal quenching for RE-related PL becomes small when increasing the Al contents. The PL decay time of REIs used in the present work becomes shorter when increasing the temperature and/or PL peak energy. The temperature dependence of PL intensity and the decay time are analysed by assuming phonon assisted energy-back-transfer model, in which the energy in REIs escape to trap levels. From the results, the improvement of PL properties can be well explained by the model, in which the activation energy for energy-back-transfer process is increased as increasing the Al contents.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V3.9
Copyright
Copyright © Materials Research Society 2005

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