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Enhanced adhesion of Cu film on a low-k material by using Ti glue layer, B dopant and N2 plasma treatment

Published online by Cambridge University Press:  01 February 2011

Y.K. Ko ,
S. Lee ,
H.J. Yang ,
C. Shim ,
D. Jung  and
J.G. Lee
Y.K. Ko
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
S. Lee
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
H.J. Yang
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
C. Shim
Affiliation:
Department of Physics, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea
D. Jung
Affiliation:
Department of Physics, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea
J.G. Lee
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
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Abstract

Adhesion property of Cu film on a low-k material was investigated. The low-k films deposited using a mixture of hexamethyldisilane(HMDS) and para-xylene had a dielectric constant as low as 2.7 and thermal stability up to 400°C. In this work, Ti glue layer, boron dopant, and N2 plasma treatment were applied to improve adhesion between Cu and the low-k films. Adhesion property was significantly enhanced by N2 plasma-treatment on the low-k film and boron dopant in Cu film. This enhanced adhesion was attributed to the formation of new binding states between Ti and the plasma-treated surface of the low-k film and to the diffusion of B from Cu to Ti and low-k films. Cu(B)/Ti/low-k film annealed at 350°C withstood an applied load of about 23 N during the scratch test.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E3.27
Copyright
Copyright © Materials Research Society 2003

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References

1. Murarka, S.P., Solid State Technol. 39, 83 (1996).Google Scholar
2. Jeng, S.P., Hanemann, R.H., and Chang, M.C., Mater. Res. Soc. Symp. Proc. 337, 25 (1994).Google Scholar
3. Murarka, S.P., Gutmann, R.J., Kaloyeros, A.E., and Lanford, W.A., Thin Solid Films, 236, 257 (1993).Google Scholar
4. Jian, A., Kodas, T.T., Jairath, R., and Hampden-Smith, M. J., J. Vac. Sci. Technol. B11, 2107 (1993).Google Scholar
5. Murarka, S.P. and Hymes, S.W., Solid State Mater. Sci. 20, 87 (1995).Google Scholar
6. Park, Y.J., Andleigh, V.K., and Thompson, C.V., J. Appl. Phys. 85, 3546 (1999).Google Scholar
7. Chou, K.Y. and Chen, M.J., IEEE Electron Device Lett. 22, 466 (2001).Google Scholar
8. Lau, S.H., Tolentino, E., Lim, Y., Tolentino, E., and Koo, A., J. Electron. Mater. 30, 299 (2001).Google Scholar
9. Kim, K.S., Jang, Y.C., Kim, H.J., Quan, Y.C., Choi, J., Jung, D., and Lee, N.E., Thin Solid Films, 377-378, 122 (2000).Google Scholar
10. Kim, K.J., Kim, K.S., Lee, N.E., Choi, J., and Jung, D., J.Vac. Sci. Technol. A19, 1072 (2001).Google Scholar