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Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon

Published online by Cambridge University Press:  01 February 2011

Nick Bennett ,
A. J. Smith ,
C. S. Beer ,
L. O'Reilly ,
B. Colombeau ,
G. D. Dilliway ,
R. Harper ,
P. J. McNally ,
R. Gwilliam  and
N. E. B. Cowern
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Nick Bennett
Affiliation:
nicholas.bennett@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, Guildford, N/A, N/A, United Kingdom, +441483686093
A. J. Smith
Affiliation:
a.j.smith@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Guildford, N/A, N/A, United Kingdom
C. S. Beer
Affiliation:
c.s.beer@warwick.ac.uk, University of Warwick, Dept. of Physics, Coventry, N/A, N/A, United Kingdom
L. O'Reilly
Affiliation:
oreillyl@eeng.dcu.ie, Dublin City University, School of Electronic Engineering, Dublin, N/A, N/A, Ireland
B. Colombeau
Affiliation:
b.colombeau@surrey.ac.uk, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands, N/A, N/A, Singapore
G. D. Dilliway
Affiliation:
g.dilliway@surrey.ac.uk, IMEC, Leuven, N/A, N/A, Belgium
R. Harper
Affiliation:
rharper@iqesilicon.com, IQE Silicon Compounds Ltd., Cardiff, N/A, N/A, United Kingdom
P. J. McNally
Affiliation:
mcnallyp@eeng.dcu.ie, Dublin City University, School of Electronic Engineering, Dublin, N/A, N/A, Ireland
R. Gwilliam
Affiliation:
r.gwillian@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Guildford, N/A, N/A, United Kingdom
N. E. B. Cowern
Affiliation:
ees1nc@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Guildford, N/A, N/A, United Kingdom
B. J. Sealy
Affiliation:
b.sealy@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Guildford, N/A, N/A, United Kingdom
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Abstract

Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained Si. Results re-emphasise the Rs reduction for As comes purely as a result of mobility improvement whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. For the first time, strain is shown to enhance the activation of dopant atoms whilst Sb is seen to create stable ultra-shallow junctions. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultra-shallow junctions for use with strain-engineered CMOS devices.

Keywords

Sbion-implantationHall effect

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C02-03
Copyright
Copyright © Materials Research Society 2006

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