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Enhanced Degradation in P+-Poly PMOSFETs With Oxynitride Gate Dielectrics Under Hot-Hole Injection

Published online by Cambridge University Press:  10 February 2011

Y. Y. Chen ,
M. Gardner ,
J. Fulford ,
D. Wristers ,
A. B. Joshi  and
D. L. Kwong
Y. Y. Chen
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas, Austin, TX 78712, (512) 471-1016, yc10@mail.utexas.edu
M. Gardner
Affiliation:
Advanced Micro Devices, Austin, TX 78741
J. Fulford
Affiliation:
Advanced Micro Devices, Austin, TX 78741
D. Wristers
Affiliation:
Advanced Micro Devices, Austin, TX 78741
A. B. Joshi
Affiliation:
Conexant Systems Inc., Newport Beach, CA 92658
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas, Austin, TX 78712, (512) 471-1016, yc10@mail.utexas.edu
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Abstract

In this paper, a significant degradation under hot hole injection is observed in P+ -poly PMOSFETs with oxynitride gate dielectrics. In our study, both oxynitrides formed by gate oxide grown on Nitrogen Implanted Si Substrates (NISS) and NO-annealed SiO2 oxynitride gate dielectrics are used and compared to control SiO2 gate dielectrics of identical thicknesses. A physical model responsible for such enhanced degradation in PMOSFETs with oxynitride gate dielectric is proposed. It is shown that the hole injection barrier lowering as a result of the nitrogen-rich layer at the SiO2/Si interface in oxynitride is responsible for such enhanced degradation.

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References

REFERENCES

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