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Enlarged Parameter Space by Use of VHF-GD for Deposition of Thin <p> Type μc-Si:H Films

Published online by Cambridge University Press:  15 February 2011

P. Torres ,
J. Meier ,
R. Flückiger ,
H. Keppner  and
A. Shah
P. Torres
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
J. Meier
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
R. Flückiger
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
H. Keppner
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
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Abstract

In this paper new results on thin p - type μc-Si:H films deposited at low temperatures of 170 °C by the Very High Frequency - Glow Discharge technique (VHF-GD) are presented. The “tolerated” amount of diborane added in the gas phase ratio as well as the influence of three different plasma excitation frequencies (70, 100 and 130 MHz) in obtaining high electrical conductivity are investigated. The goal is to optimise very thin (< 400 Å) and hence optically transparent films by maintaining high conductivities for the application as window layers of solar cells.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 767
Copyright
Copyright © Materials Research Society 1997

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References

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